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NUS6160MN
MAXIMUM RATINGS (T J = 25 ° C, unless otherwise stated)
Rating
V IN to Ground
OUT, EN, FLAG Pins Voltage to Ground
Maximum Current from V IN to V OUT (PMOS)
Drain ? to ? Source Voltage
Gate ? to ? Source Voltage
Continuous Drain Current, Steady State
Pulsed Drain Current, t p = 10 ms
Source Current
Operating Ambient Temperature
Storage Temperature
Symbol
V IN
V OUT , V EN , V FLAG
I max
V DSS
V GS
I D
I DM
I S
T A
T STG
Min
? 0.3
? 0.3
? 8.0
? 40
? 55
Max
21
7.0
600
? 20
8.0
? 2.0
? 4.0
? 1.1
85
150
Unit
V
V
mA
V
V
A
A
A
° C
° C
Operating Junction Temperature
Thermal Resistance (Note 1)
1 in 2 (645 mm 2 ) (All devices fully enhanced)
OVP FET
FET SW
FET REG
1 in 2 (645 mm 2 ) (OVP and FET SW fully enhanced, 1 V drop across FET REG )
OVP FET
FET SW
FET REG
0.25 in 2 (161 mm 2) (All devices fully enhanced)
OVP FET
FET SW
FET REG
0.25 in 2 (161 mm 2 ) (OVP and FET SW fully enhanced, 1 V drop across FET REG )
OVP FET
FET SW
FET REG
ESD Performance (Human Body Model) Pins 1, 15, 18, 19, 20
Lead Temperature for Soldering Purposes (1/8” from case for 10 s)
T J
q JA
?
T L
68
42
46
43
39
80
79
53
56
53
49
92
150
2.5
260
° C
° C/W
kV
° C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. 1 oz. copper, double sided board. Thermal impedance requires total for D T calculations. See example in thermal description.
http://onsemi.com
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